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Fairchild Semiconductor's 100V BoostPak Solution Provides Improved Reliability, Reduces System Costs in LED Applications

2013-06-06 17: 38

Integrated Solution Features MOSFET and Diode in One Package, Simplifying Board Assembly and Saving Space


Fairchild Semiconductor, a leading global supplier of high performance power and mobile semiconductor solutions, optimizes the MOSFET and diode selection process by introducing a family of 100 V BoostPak devices that combines a MOSFET and diode in one package to replace discrete solutions currently used in LED TV / monitor backlight, LED lighting and DC-DC converter applications.

By integrating the MOSFET and diode into a single package, the FDD1600N10ALZD and FDD850N10LD devices save board space, simplify assembly, lower bill of material (BOM) costs and improve reliability of the application.

The devices feature an N-channel MOSFET produced using Fairchild’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is a hyperfast rectifier with low forward voltage drop and excellent switching performance. It has much lower leakage current than a Shottky diode, which improves system reliability in high temperature applications.

Key Features:

FDD1600N10ALZD:
RDS(ON) = 124 mΩ (Typ.)@ VGS = 10 V, ID = 3.4 A
RDS(ON) = 175 mΩ (Typ.)@ VGS = 5 V, ID = 2.1 A
Low Gate Charge = 2.78 nC (Typ.)
Low Crss = 2.04 pF (Typ.)

FDD850N10LD:
RDS(ON) = 61 mΩ (Typ.)@ VGS = 10 V, ID = 12 A
RDS(ON) = 64 mΩ (Typ.)@ VGS = 5.0 V, ID = 12 A
Low Gate Charge = 22.2 nC (Typ.)
Low Crss = 42 pF (Typ.)

Both:
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant

Packaging and Pricing Information

Price: in 1,000 quantity pieces
FDD1600N10ALZD: US$0.49
FDD850N10LD: US$0.57

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